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Anglický jazyk
MeV electron irradiation of Si heterostructures
Autor: Sonia Kaschieva
Radiation defect generation by high-energy MeV electron irradiation of n- and p- type Si-SiO2 structure with different kind of oxides has been studied. The morphology changes of SiO2 oxide during MeV electrons irradiation was observed by AFM. Si+ ion implanted... Viac o knihe
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O knihe
Radiation defect generation by high-energy MeV electron irradiation of n- and p- type Si-SiO2 structure with different kind of oxides has been studied. The morphology changes of SiO2 oxide during MeV electrons irradiation was observed by AFM. Si+ ion implanted Si-SiO2 structures before and after MeV electron irradiation are presented. The redistribution of oxygen and silicon atoms and Si nanocrystal generation during MeV electron irradiation was observed by RBS/C and AFM techniques respectively. Optical properties, photoluminescence and spectroscopic studies of SiOx films irradiated with MeV electrons are carried out also.
- Vydavateľstvo: Scholars' Press
- Rok vydania: 2019
- Formát: Paperback
- Rozmer: 220 x 150 mm
- Jazyk: Anglický jazyk
- ISBN: 9786138502845
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