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Anglický jazyk
Characterization of Stress in GaN-on-Sapphire Microelectromechanical Systems Structures Using Micro-Raman Spectroscopy
Autor: Francisco E. Parada
Micro-Raman ( Raman) spectroscopy is an e cient, non-destructive techniquewidely used to determine the quality of semiconductor materials and microelectrome-chanical systems. This work characterizes the stress distribution in wurtzite gal-lium nitride grown... Viac o knihe
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O knihe
Micro-Raman ( Raman) spectroscopy is an e cient, non-destructive techniquewidely used to determine the quality of semiconductor materials and microelectrome-chanical systems. This work characterizes the stress distribution in wurtzite gal-lium nitride grown on c-plane sapphire substrates by molecular beam epitaxy. Thiswide bandgap semiconductor material is being considered by the Air Force ResearchLaboratory for the fabrication of shock-hardened MEMS accelerometers.
- Vydavateľstvo: Legare Street Press
- Rok vydania: 2012
- Formát: Paperback
- Rozmer: 234 x 156 mm
- Jazyk: Anglický jazyk
- ISBN: 9781288368518
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