• Anglický jazyk

Characterization of Stress in GaN-on-Sapphire Microelectromechanical Systems Structures Using Micro-Raman Spectroscopy

Autor: Francisco E. Parada

Micro-Raman ( Raman) spectroscopy is an e cient, non-destructive techniquewidely used to determine the quality of semiconductor materials and microelectrome-chanical systems. This work characterizes the stress distribution in wurtzite gal-lium nitride grown... Viac o knihe

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O knihe

Micro-Raman ( Raman) spectroscopy is an e cient, non-destructive techniquewidely used to determine the quality of semiconductor materials and microelectrome-chanical systems. This work characterizes the stress distribution in wurtzite gal-lium nitride grown on c-plane sapphire substrates by molecular beam epitaxy. Thiswide bandgap semiconductor material is being considered by the Air Force ResearchLaboratory for the fabrication of shock-hardened MEMS accelerometers.

  • Vydavateľstvo: Legare Street Press
  • Rok vydania: 2012
  • Formát: Paperback
  • Rozmer: 234 x 156 mm
  • Jazyk: Anglický jazyk
  • ISBN: 9781288368518

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